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SKM100GAR123D - IGBT

This page provides the datasheet information for the SKM100GAR123D, a member of the SKM100GAL123D IGBT family.

Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bon- ding Technology.
  • Large clearance (10 mm) and creepage distances (20 mm). Typical.

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Datasheet preview – SKM100GAR123D

Datasheet Details

Part number SKM100GAR123D
Manufacturer Semikron
File Size 942.38 KB
Description IGBT
Datasheet download datasheet SKM100GAR123D Datasheet
Additional preview pages of the SKM100GAR123D datasheet.

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Full PDF Text Transcription

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Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms; Tj = 150 °C Values 1200 1200 100 / 90 200 / 180 ± 20 690 – 40 . . .
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