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Semikron Electronic Components Datasheet

SKM1400GAL12P4 Datasheet

IGBT

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SKM1400GAL12P4
SEMITRANS® 10
IGBT4 Modules
SKM1400GAL12P4
Features*
• Symmetrical current sharing
• Low-inductive module design
• High mechanical robustness
• UL recognized, file no. E63532
Typical Applications
• Brake chopper
• Windturbines
Remarks
Recommended Tjop = -40 ... +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 100 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 1400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 49.2 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
2165
1453
1400
2800
-20 ... 20
10
-40 ... 175
1200
1849
1181
2800
7296
-40 ... 175
1200
1849
1181
2800
7296
-40 ... 175
-40 ... 150
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
°C
V
A
A
A
A
°C
°C
V
min.
5.1
typ.
1.75
2.18
0.80
0.70
0.68
1.06
5.8
81.6
5.28
4.50
7500
0.6
max. Unit
2.07
V
2.44
V
0.90
V
0.80
V
0.83 mΩ
1.17 mΩ
6.4
V
5
mA
nF
nF
nF
nC
Ω
GAL
© by SEMIKRON
Rev. 1.0 – 08.09.2020
1


Semikron Electronic Components Datasheet

SKM1400GAL12P4 Datasheet

IGBT

No Preview Available !

SKM1400GAL12P4
SEMITRANS® 10
IGBT4 Modules
SKM1400GAL12P4
Features*
• Symmetrical current sharing
• Low-inductive module design
• High mechanical robustness
• UL recognized, file no. E63532
Typical Applications
• Brake chopper
• Windturbines
Remarks
Recommended Tjop = -40 ... +150°C
Characteristics
Symbol Conditions
IGBT
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
VCC = 600 V
IC = 1400 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
di/dton = 11 kA/µs
di/dtoff = 7.4 kA/µs
dv/dt = 3100 V/µs
Ls = 25 nH
per IGBT
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
per IGBT (λgrease=0.81 W/(m*K))
Inverse diode
VF = VEC
IF = 1400 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
chiplevel
IF = 1400 A
VGE = -15 V
di/dtoff = 11 kA/µs
VR = 600 V
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Freewheeling diode
VF = VEC
IF = 1400 A
VGE = 0 V
level = chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
chiplevel
IF = 1400 A
di/dtoff = 11 kA/µs
VGE = -15 V
VR = 600 V
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Ms
Mt
measured per switch, TC = 25 °C
calculated without thermal coupling
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module
(λgrease=0.81 W/(m*K))
to heat sink M5
to terminals M8
to terminals M4
w
min.
4
8
1.8
typ.
355
120
150
800
155
290
0.008
2.07
1.98
1.30
0.90
0.55
0.77
1020
260
110
0.01
2.07
1.98
1.30
0.90
0.55
0.77
1020
260
110
0.010
10
0.2
0.004
0.004
max. Unit
ns
ns
mJ
ns
ns
mJ
0.02 K/W
K/W
2.38
V
2.28
V
1.50
V
1.10
V
0.63 mΩ
0.84 mΩ
A
µC
mJ
0.033 K/W
K/W
2.38
V
2.28
V
1.50
V
1.10
V
0.63 mΩ
0.84 mΩ
A
µC
mJ
0.033 K/W
K/W
nH
mΩ
K/W
K/W
6
Nm
10
Nm
2.1
Nm
1250
g
GAL
2
Rev. 1.0 – 08.09.2020
© by SEMIKRON


Part Number SKM1400GAL12P4
Description IGBT
Maker Semikron
PDF Download

SKM1400GAL12P4 Datasheet PDF






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