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SKM150GB12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM150GB12F4
Features*
• High speed trench and field-stop IGBT • CAL4 ultra-fast = soft switching 4.
generation CAL-diode • Insulated copper baseplate using DBC
technology (Direct Bonded Copper) • Increased power cycling capability • For higher switching frequencies above
15kHz • UL recognized, file no. E63532
Typical Applications
• UPS • Electronic welders • Inductive heating • Switched mode power supplies
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V RG on/off ≥ 2.
SKM150GB12F4 Datasheet
