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SKM150GB17E4GH16 - IGBT

Key Features

  • H16: IGBT-chip with improved robustness against moisture.
  • IGBT4 = 4. generation medium fast trench IGBT (Infineon).
  • CAL4 = Soft switching 4. Generation CAL-Diode.
  • Insulated copper baseplate using DBC Technology (Direct Copper Bonding).
  • With integrated Gate resistor.
  • For switching frequencies up to 8kHz.
  • UL recognized, file no. E63532 Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM150GB17E4GH16 SEMITRANS® 3 IGBT4 Modules SKM150GB17E4GH16 Features • H16: IGBT-chip with improved robustness against moisture • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications* • Medium voltage inverter market Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ...