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SKM181A3 - Power MOSFET

Key Features

  • N Channel, enhancement mode.
  • Short internal connections avoid oscillations.
  • DCB-ceramic isolated copper baseplate.
  • All electrical connections on top for easy busbaring.
  • Large clearance (10 mm) and creepage distances (13 mm).
  • UL recognized, file no. E63 532 Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Absolute Maximum Ratings Symbol Conditions 1) VDS VDGR ID IDM VGS PD Tj, (Tstg) Visol humidity climate IF = –ID IFM = –I DM RGE = 20 k Ω Values Units 800 800 36 144 ± 20 700 –40 ... +150 (125) 2 500 Class F 40/125/56 36 144 V V A A V W °C V SEMITRANS® M Power MOSFET Modules SKM 181 A3 3) SKM 181 A3R *) AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode A A Characteristics Symbol Conditions 1) SEMITRANS M1 min. 800 2,1 – – – – 16 – – – – – – – – – – – – – – – – typ. – 3,0 50 300 10 170 33 – 10 1,2 0,6 – 60 30 350 70 0,9 1200 – 42 max.