SKM200GAL123D igbt equivalent, igbt.
* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High shor.
→ B6 - 153
* Switching (not for linear use) Tcase = 25 °C, unless otherwise specified 2) IF =
– IC,.
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