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Semikron Electronic Components Datasheet

SKM400GARL066T Datasheet

IGBT

No Preview Available !

SKM400GARL066T
SEMITRANS® 5
Trench IGBT Modules
SKM400GARL066T
Features
• Homogeneous Si
• Trench = trenchgate technology
• VCE(sat) with positive temperature
coefficient
• Integrated NTC temperature sensor
• UL recognized, file no. E63532
Typical Applications*
• UPS
• Inverter
Remarks
• Case temperature limited to Tc=125°C
max
• Reccomended Top=-40..+150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES
tpsc
Tj
VCC = 360 V
VGE 15 V
VCES 600 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6.4 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
600
504
379
400
800
-20 ... 20
6
-40 ... 175
46
33
50
100
345
-40 ... 175
421
301
400
800
2880
-40 ... 175
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.85
V
1.70
2.10
V
0.9
1
V
0.85
0.9
V
1.38
2.13 m
2.13
3.00 m
5
5.8
6.5
V
0.21 mA
mA
24.7
nF
1.54
nF
0.73
nF
3800
nC
1
GARL-T
© by SEMIKRON
Rev. 1 – 12.02.2015
1


Semikron Electronic Components Datasheet

SKM400GARL066T Datasheet

IGBT

No Preview Available !

SKM400GARL066T
SEMITRANS® 5
Trench IGBT Modules
SKM400GARL066T
Features
• Homogeneous Si
• Trench = trenchgate technology
• VCE(sat) with positive temperature
coefficient
• Integrated NTC temperature sensor
• UL recognized, file no. E63532
Typical Applications*
• UPS
• Inverter
Remarks
• Case temperature limited to Tc=125°C
max
• Reccomended Top=-40..+150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 300 V
IC = 400 A
VGE = +15/-8 V
RG on = 0.5
RG off = 0.5
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2000 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs
Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 50 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
IF = 50 A
VGE = ±15 V
VCC = 300 V
per diode
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Freewheeling diode
VF = VEC
IF = 400 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 2000 A/µs
VGE = -8 V
Tj = 150 °C
VCC = 300 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M6
min.
typ.
93
72
4.48
317
102
15.78
max.
0.12
1.54
1.78
1.59
1.83
1
1.1
0.85
0.95
10.8
13.5
14.9
17.6
1.87
1.35
1.53
1.33
1.52
1
1.1
0.85
0.95
0.9
1.1
1.2
1.4
350
24
8
0.23
0.038
3
5
2.5
5
w
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
310
493 ± 5%
3550
±2%
Unit
ns
ns
mJ
ns
ns
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GARL-T
2
Rev. 1 – 12.02.2015
© by SEMIKRON


Part Number SKM400GARL066T
Description IGBT
Maker Semikron
PDF Download

SKM400GARL066T Datasheet PDF






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