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SKM450GB33F - IGBT

Key Features

  • 3.3 kV F-IGBT.
  • 450A half bridge.
  • Low Vce, Eoff and Rth.
  • High power density.
  • Low inductance module design.
  • T-sensor.
  • Easy paralleling and easy power scaling.
  • For flexible and compact medium voltage inverters Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM450GB33F SEMITRANS® 20 SKM450GB33F Features • 3.3 kV F-IGBT • 450A half bridge • Low Vce, Eoff and Rth • High power density • Low inductance module design • T-sensor • Easy paralleling and easy power scaling • For flexible and compact medium voltage inverters Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150 °C, VCES ≤ 3300 Operation Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj Operation Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Values 3300 760 542 450 900 -20 ... 20 10 -50 ... 150 674 476 450 900 t.b.d. -50 ... 150 1000 -55 ...