SKM450GB33F
Features
- 3.3 k V F-IGBT
- 450A half bridge
- Low Vce, Eoff and Rth
- High power density
- Low inductance module design
- T-sensor
- Easy paralleling and easy power scaling
- For flexible and pact medium voltage inverters
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 2x ICnom
VCC = 2200 V, Ls = 40 n H, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150 °C, VCES ≤ 3300 Operation
Inverse diode
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2x IFnom
IFSM tp = 10 ms, sin 180°,
Tj
Operation
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Values
3300 760 542 450 900 -20 ... 20
-50 ... 150
674 476 450 900 t.b.d. -50 ... 150
1000 -55 ......
