900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Semikron Electronic Components Datasheet

SKM600GA17E4 Datasheet

IGBT

No Preview Available !

SKM600GA17E4
SEMITRANS® 4
IGBT4 Modules
SKM600GA17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 1000 V
VGE 15 V
VCES 1700 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 600 A
VGE = +15/-15 V
RG on = 2
RG off = 2
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 7580 A/µs Tj = 150 °C
di/dtoff = 2830 A/µs
du/dt = 5420 V/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1700
1021
775
600
1800
-20 ... 20
10
-40 ... 175
629
463
600
1200
3420
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.90
2.20
V
2.25
2.45
V
1.1
1.2
V
1
1.1
V
1.33
1.67 m
2.08
2.25 m
5.2
5.8
6.4
V
5
mA
mA
48
nF
2.00
nF
1.52
nF
4800
nC
1.3
213
ns
78
ns
258
mJ
908
ns
184
ns
246
mJ
0.042 K/W
GA
© by SEMIKRON
Rev. 2 – 04.05.2015
1


Semikron Electronic Components Datasheet

SKM600GA17E4 Datasheet

IGBT

No Preview Available !

SKM600GA17E4
SEMITRANS® 4
IGBT4 Modules
SKM600GA17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 7000 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 1200 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink M6
Mt
M6
to terminals
M4
w
min.
typ.
max. Unit
1.98
2.37
V
2.11
2.52
V
1.32
1.56
V
1.08
1.22
V
1.10
1.35 m
1.71
2.2
m
555
A
185
µC
132
mJ
0.095 K/W
15
nH
0.45
m
0.65
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
1.1
2
Nm
330
g
GA
2
Rev. 2 – 04.05.2015
© by SEMIKRON


Part Number SKM600GA17E4
Description IGBT
Maker Semikron
PDF Download

SKM600GA17E4 Datasheet PDF






Similar Datasheet

1 SKM600GA17E4 IGBT
Semikron





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy