SKM600GAE12E4
Features
- IGBT4 = 4. generation medium fast trench IGBT
- CAL4F = Soft switching 4. generation CAL-diode
- Enhanced 900A free-wheeling diode
- With integrated gate resistor
- Isolated copper baseplate using DBC technology (Direct Bonded Copper)
- UL recognized, file no. E63532
Remarks
- Case temperature limited to Tc = 125°C max
- Remended Top = -40 ... +150°C
- Product reliability results valid for Tj =
150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3x ICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2x IFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2x...
