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SKM600GAE12E4 - IGBT

Key Features

  • IGBT4 = 4. generation medium fast trench IGBT.
  • CAL4F = Soft switching 4. generation CAL-diode.
  • Enhanced 900A free-wheeling diode.
  • With integrated gate resistor.
  • Isolated copper baseplate using DBC technology (Direct Bonded Copper).
  • UL recognized, file no. E63532 Remarks.
  • Case temperature limited to Tc = 125°C max.
  • Recommended Top = -40 +150°C.
  • Product reliability results valid for Tj = 150° Absolute Maximum Ratin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM600GAE12E4 SEMITRANS® 5 IGBT4 Modules Engineering Sample SKM600GAE12E4 Target Data Features • IGBT4 = 4. generation medium fast trench IGBT • CAL4F = Soft switching 4. generation CAL-diode • Enhanced 900A free-wheeling diode • With integrated gate resistor • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • UL recognized, file no. E63532 Remarks • Case temperature limited to Tc = 125°C max • Recommended Top = -40 ...