SKM75GB17E4H16
Features
- H16: IGBT-chip with improved robustness against moisture
- IGBT4 = 4. generation medium fast trench IGBT (Infineon)
- CAL4 = Soft switching 4. Generation CAL-Diode
- Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
- With integrated Gate resistor
- For switching frequencies up to 8k Hz
- UL recognized, file no. E63532
Typical Applications-
- Medium voltage inverter market
Remarks
- Case temperature limited to Tc = 125°C max.
- Remended Top = -40 ... +150°C
- Product reliability results valid for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 3x ICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2x IFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0 r...
