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Semikron Electronic Components Datasheet

SKiM301MLI07E4 Datasheet

IGBT

No Preview Available !

SKiM301MLI07E4
SKiM® 4
IGBT Modules
SKiM301MLI07E4
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• UPS
• 3 Level Inverter
Remarks
• Case temperature limited to
Tc = 125°C max, recommended
Top = -40 … +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 2xICnom
VGES
tpsc
Tj
VCC = 360 V
VGE 15 V
VCES 650 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Clamping diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 4.8 mA
VGE = 0 V
VCE = 650 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
650
256
202
300
600
-20 ... 20
6
-40 ... 175
198
154
300
600
1476
-40 ... 175
198
154
200
400
1476
-40 ... 175
400
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.90
V
1.70
2.10
V
0.9
1
V
0.82
0.9
V
1.8
3.0
m
2.9
4.0
m
5.1
5.8
6.4
V
mA
mA
18.48
nF
1.16
nF
0.55
nF
nC
1.0
MLI
© by SEMIKRON
Rev. 0 – 01.10.2013
1


Semikron Electronic Components Datasheet

SKiM301MLI07E4 Datasheet

IGBT

No Preview Available !

SKiM301MLI07E4
SKiM® 4
IGBT Modules
SKiM301MLI07E4
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• UPS
• 3 Level Inverter
Remarks
• Case temperature limited to
Tc = 125°C max, recommended
Top = -40 … +150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
Conditions
VCE = 300 V
IC = 300 A
Tj = 150 °C
Tj = 150 °C
RG on = 2.7
Tj = 150 °C
RG off = 2.7
Tj = 150 °C
di/dton = 5566 A/µs
di/dtoff = 1353 A/µs
Tj = 150 °C
Tj = 150 °C
per IGBT
min.
typ.
149.14
79.71
2.78
420
180
17.48
0.3
max.
Unit
ns
ns
mJ
ns
ns
mJ
K/W
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chiplevel
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
VGE = -15 V
VR = 300 V
per diode
Clamping diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Module
LCE
RCC'+EE'
VGE = -15 V
VR = 300 V
per diode
terminal-chip
Ms
to heat sink (M5)
Mt
to terminals M6
w
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Ts = 25 °C
Ts = 125 °C
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
0.95
1.2
0.95
1.2
2
4
typ.
1.6
1.7
1.04
0.85
1.8
2.7
0.45
1.4
1.4
1.04
0.85
1.8
2.7
0.45
22
1.35
1.75
317
493 ± 5%
3550
±2%
max.
2.0
2.2
1.236
0.99
2.6
3.9
1.8
1.8
1.236
0.99
2.6
3.9
3
5
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
Nm
Nm
g
K
MLI
2
Rev. 0 – 01.10.2013
© by SEMIKRON


Part Number SKiM301MLI07E4
Description IGBT
Maker Semikron
PDF Download

SKiM301MLI07E4 Datasheet PDF






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