SKiM301MLI12E4
Features
- IGBT 4 Trench Gate Technology
- Solder technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
- Pressure contact technology for thermal contacts
- Spring contact system to attach driver
PCB to the control terminals
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor
Typical Applications
- UPS
- 3 Level Inverter
Remarks-
- Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules)
- Remended Tjop = -40 ...+150°C
- IGBT1 : outer IGBTs T1 & T4
- IGBT2 : inner IGBTs T2 & T3
- Diode1 : outer diodes D1 & D4
- Diode2 : inner diodes D2 & D3
- Diode5 : clamping diodes D5 & D6
Absolute Maximum Ratings
Symbol Conditions
IGBT1 VCES IC
ICnom ICRM VGES tpsc
Tj IGBT2 VCES IC
ICnom ICRM VGES tpsc
Tj Diode1 VRRM IF
IFnom IFRM IFSM Tj Diode2 VRRM IF
IFnom IFRM IFSM Tj Diode5 VRRM IF
IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Tj = 25 °C...
