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SKiM601MLI07E4
SKiM® 4
IGBT Modules
SKiM601MLI07E4
Features
• IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature
coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate • Pressure contact technology for
thermal contacts • Spring contact system to attach driver
PCB to the control terminals • High short circuit capability, self limiting
to 6 x IC • Integrated temperature sensor
Typical Applications*
• UPS • 3 Level Inverter
Remarks
• Case temperature limited to Tc = 125°C max, recommended Top = -40 … +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 175 °C
Ts = 25 °C Ts = 70 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V
Tj = 150 °C
Inverse diode
IF
SKiM601MLI07E4 Datasheet
