Datasheet4U Logo Datasheet4U.com

SKiM601TMLI12E4B - IGBT

Key Features

  • IGBT 4 Trench Gate Technology.
  • Solder technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Remarks.
  • Case t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SKIM601GD126DM IGBT Semikron International
SKiM600GD126DLM IGBT Semikron International
SKiM606GD066HD IGBT Semikron International
SKiM609GAL12E4 IGBT Semikron International
SKiM609GAR12E4 IGBT Semikron International

Other Datasheets by Semikron Danfoss

Part Number Description
SKiM601MLI07E4 IGBT
SKiM201MLI12E4 IGBT
SKiM301MLI07E4 IGBT
SKiM301MLI12E4 IGBT
SKiM301TMLI12E4B IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SKiM601TMLI12E4B SKiM® 4 Trench IGBT Modules SKiM601TMLI12E4B Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 ...