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Semikron Electronic Components Datasheet

SKiiP37AC12F4V1 Datasheet

IGBT

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SKiiP 37AC12F4V1
MiniSKiiP® 3
IGBT module
SKiiP 37AC12F4V1
Features*
• IGBT4 Fast
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj150°C (recommended
Tj,op=-40...+150°C)
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
AC
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 2 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 2.6 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
VGE = - 8 V...+ 15 V
RGint
td(on)
tr
Eon
td(off)
tf
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 75 A
RG on = 12 Ω
RG off = 12 Ω
di/dton = 1493 A/µs
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dtoff = 1220 A/µs Tj = 150 °C
Eoff
VGE = +15/-15 V Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rev. 1.0 – 10.07.2019
Values
1200
83
67
98
79
75
225
-20 ... 20
10
-40 ... 175
82
65
95
76
75
150
430
-40 ... 175
80
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
A
A
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2.05
2.42
V
2.59
2.96
V
1.10
1.28
V
0.95
1.13
V
13
15
mΩ
22
24
mΩ
5.2
5.8
6.4
V
0.3
mA
4.40
nF
0.29
nF
0.24
nF
425
nC
0
Ω
32
ns
46
ns
10
mJ
314
ns
49
ns
5.4
mJ
0.55
K/W
0.42
K/W
1


Semikron Electronic Components Datasheet

SKiiP37AC12F4V1 Datasheet

IGBT

No Preview Available !

SKiiP 37AC12F4V1
MiniSKiiP® 3
IGBT module
SKiiP 37AC12F4V1
Features*
• IGBT4 Fast
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj150°C (recommended
Tj,op=-40...+150°C)
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 75 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-s)
Rth(j-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 1830 A/µs
VGE = +15/-15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
Temperature Sensor
R100
R(T)
Tr=100°C (R25=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2]
, A = 7.635*10-3°C-1,
B = 1.731*10-5°C-2
min.
2
typ.
2.17
2.11
1.30
0.90
12
16
69
12
4.4
0.77
0.61
-
82
1670 ±
3%
max. Unit
2.49
V
2.42
V
1.50
V
1.10
V
13
mΩ
18
mΩ
A
µC
mJ
K/W
K/W
nH
2.5
Nm
g
Ω
AC
2
Rev. 1.0 – 10.07.2019
© by SEMIKRON


Part Number SKiiP37AC12F4V1
Description IGBT
Maker Semikron
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SKiiP37AC12F4V1 Datasheet PDF






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