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Semikron Electronic Components Datasheet

SKiiP39GB12E4V1 Datasheet

IGBT

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SKiiP39GB12E4V1
MiniSKiiP® 3 Dual
SKiiP39GB12E4V1
Features
• Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Remarks
• Case temp. limited to TC= 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj150
(recomm. Top = -40 ... +150°C)
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 15.2 mA
ICES
VGE = 0 V
Tj = 25 °C
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
- 8 V...+ 15 V
RGint
td(on)
tr
Eon
td(off)
tf
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 400 A
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 6940 A/µs
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dtoff = 2930 A/µs Tj = 150 °C
Eoff
Rth(j-s)
VGE = +15/-15 V
Ls = 25 nH
Tj = 150 °C
per IGBT, λpaste=0.8 W/(mK)
Rev. 1.0 – 02.03.2017
Values
1200
388
312
580
473
400
1200
-20 ... 20
10
-40 ... 175
363
287
422
335
400
1200
1980
-40 ... 175
280
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
A
A
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.80
2.20
0.80
0.70
2.5
3.8
5.8
0.1
-
24.60
1.62
1.38
2260
1.9
183
62
20.8
520
118
49.7
0.16
max. Unit
2.05
V
2.40
V
0.90
V
0.80
V
2.9
mΩ
4.0
mΩ
6.5
V
0.3
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
1


Semikron Electronic Components Datasheet

SKiiP39GB12E4V1 Datasheet

IGBT

No Preview Available !

SKiiP39GB12E4V1
MiniSKiiP® 3 Dual
SKiiP39GB12E4V1
Features
• Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Remarks
• Case temp. limited to TC= 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj150
(recomm. Top = -40 ... +150°C)
Characteristics
Symbol Conditions
Inverter - IGBT
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
Inverse - Diode
VF = VEC
IF = 400 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Rth(j-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 6840 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B25/85
R(T)=R25*exp[B25/85*(1/T-1/298)], [T]=K
min.
2
typ.
0.08
2.20
2.15
1.30
0.90
2.3
3.1
425
63.2
30.2
0.19
0.15
15
76
493 ± 5%
3420
max.
2.52
2.47
1.50
1.10
2.6
3.4
2.5
Unit
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
nH
Nm
g
Ω
K
GB
2
Rev. 1.0 – 02.03.2017
© by SEMIKRON


Part Number SKiiP39GB12E4V1
Description IGBT
Maker Semikron
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SKiiP39GB12E4V1 Datasheet PDF






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