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SKiiP39TMLI12T4V2 Datasheet

IGBT

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SKiiP 39TMLI12T4V2
MiniSKiiP® 3
IGBT module
SKiiP 39TMLI12T4V2
Features*
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks*
• Case temperature limited to TC= 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Top=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
• It(RMS) = 160A max. for power terminals
Absolute Maximum Ratings
Symbol Conditions
IGBT1
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
IGBT2
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Diode1
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Diode2
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Module
It(RMS)
Tstg
Visol
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V, VGE 15 V, Tj = 150 °C,
VCES 1200 V
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
AC sinus 50 Hz, t = 1 min
Values
1200
235
191
290
236
200
600
-20 ... 20
6
-40 ... 175
650
207
165
240
192
200
600
-20 ... 20
6
-40 ... 175
1200
194
154
224
179
200
600
990
-40 ... 175
650
223
174
255
200
200
400
1476
-40 ... 175
160
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
A
°C
A
°C
V
TMLI
© by SEMIKRON
Rev. 2.0 – 24.07.2019
1


Semikron Electronic Components Datasheet

SKiiP39TMLI12T4V2 Datasheet

IGBT

No Preview Available !

SKiiP 39TMLI12T4V2
MiniSKiiP® 3
IGBT module
SKiiP 39TMLI12T4V2
Features*
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks*
• Case temperature limited to TC= 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Top=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
• It(RMS) = 160A max. for power terminals
Characteristics
Symbol Conditions
IGBT1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 12 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 200 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2300 A/µs Tj = 150 °C
di/dtoff = 1630 A/µs
Tj = 150 °C
Rth(j-s)
Rth(j-s)
IGBT2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 3.2 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 200 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3300 A/µs Tj = 150 °C
di/dtoff = 2200 A/µs
Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
min.
5
5
typ.
1.80
2.20
0.80
0.70
5.0
7.5
5.8
12.30
0.81
0.69
1130
3.8
186
80
7.5
377
109
12.8
0.23
0.16
1.45
1.70
0.90
0.82
2.8
4.4
5.8
12.32
0.77
0.37
1600
1.0
93
62
2
295
86
9.3
0.33
0.26
max. Unit
2.05
V
2.40
V
0.90
V
0.80
V
5.8
mΩ
8.0
mΩ
6.5
V
0.3
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
1.85
V
2.10
V
1.00
V
0.90
V
4.3
mΩ
6.0
mΩ
6.5
V
0.3
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
TMLI
2
Rev. 2.0 – 24.07.2019
© by SEMIKRON


Part Number SKiiP39TMLI12T4V2
Description IGBT
Maker Semikron
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SKiiP39TMLI12T4V2 Datasheet PDF






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