Download SKiiP703GD121-3DUW Datasheet PDF
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SKiiP703GD121-3DUW Key Features

  • SKiiP technology inside
  • pressure contact of ceramic
  • pressure contact of main
  • pressure contact of auxiliary
  • increased thermal cycling
  • low stray inductance
  • homogenous current
  • integrated current sensor
  • integrated temperature sensor
  • high power density 1) Theatsink = 25 °C, unless

SKiiP703GD121-3DUW Description

sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol AC, 1min. Tj = 125 °C VF= VEC IF= 450A; Tj = 25 °C Tj = 125 °C VTO Tj = 125 °C rT Tj = 125 °C Thermal characteristics Rthjs per IGBT Rthjs Rthsa3) per diode.