32NAB125T12 Datasheet | Semikron Danfoss

SKii P 32 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = - IC IFM = - ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 1500 35 700 2400 - 40 . . . + 150 - 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Mini SKIIP 3 SEMIKRON integrated intelligent Power SKii P 32 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Bridge Rectifier VRRM Theatsink = 80 °C ID tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter IC = 50 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 50 A; Tj = 125 °C tr Rgon = Rgoff = 22 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper VCEsat IC = 25 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 25 A; Tj = 125 °C tr .. Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C r T IF = 50 A, VR = - 600 V IRRM di F/dt = - 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C per diode Rthjh Temperature Sensor T = 25 / 100 °C RTS min. - - - - - - - - - - - - - - - - - - - - - - - - - typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 44 ns 100 56 ns 500 380 ns 100 70 m J - 13 n F - 3,3 K/W 0,5 - V 2,5(3,1) 3,0(3,7) ns 150 75 ns 130 65 ns 600 400 ns 100 50 m J - 6,2 n F - 1,65 K/W 1,0 - V 2,0(1,8) 2,5(2,3) V 1,2 1,0 mΩ 22 16 A - 40 µC - 8,0 m J - 2,0 K/W...