SEMIX302GB126HDS Description
125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX302GB126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data.
SEMIX302GB126HDS Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532