* Terminal height 17 mm
* Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5
* 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C,
SEMIX302KD16S Datasheet (150.27 KB)
SEMIX302KD16S
Semikron International
150.27 KB
Rectifier diode module.
SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 3.
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