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SEMIX341D16S - Bridge Rectifier Module

Key Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w Conditions Tj = 25 °C, IF = 400 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode min. typ. max. 1.75 0.9 2.7 4.5 Unit V V mΩ mA K/W K/W Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX341D16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 340 290 2500 2000 31250 20000 1700 1600 -40 ... 130 -40 ... 125 Unit A A A A A2s A2s V V °C °C V V Recitifier Diode sin. 180° 10 ms 10 ms SEMiX 13 ® VRSM VRRM Tj Module Bridge Rectifier Module (uncontrolled) SEMiX341D16s Tstg Visol AC sinus 50Hz 1 min 1s 4000 4800 Characteristics Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w Conditions Tj = 25 °C, IF = 400 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode min. typ. max. 1.75 0.9 2.7 4.