SEMIX353GB126HDS Description
125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX353GB126HDs .. Tj = 150 °C IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol.
SEMIX353GB126HDS Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532