SEMIX603GB066HDS - IGBT

Features

Homogeneous Si.
Trench = Trenchgate technology.
VCE(sat) with positive temperature coefficient.
UL recognised file no. E63532 Typical.

Semikron International

Datasheet Details

Part number	SEMIX603GB066HDS
Manufacturer	Semikron International
File Size	404.99 KB
Description	IGBT
Datasheet	SEMIX603GB066HDS Datasheet
Additional preview pages of the SEMIX603GB066HDS datasheet.

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Full PDF Text Transcription

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SEMiX603GB066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.

Published: Jul 29, 2009 |