Datasheet4U Logo Datasheet4U.com

SEMiX101GD12Vs - IGBT

Key Features

  • Homogeneous Si.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SEMiX105GD12T4 IGBT Semikron
SEMiX106GD12T4p IGBT Semikron
SEMiX151GB17E4s IGBT Semikron
SEMiX151GD12E4s IGBT Semikron
SEMiX155GD12T4 IGBT Semikron

Other Datasheets by Semikron Danfoss

Part Number Description
SEMIX101GD126HDS IGBT
SEMIX101GD128DS IGBT
SEMiX101GD12E4s IGBT
SEMIX101GD12T4S IGBT
SEMIX101GD066HDS IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMiX101GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX101GD12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.