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SEMiX151GAL12E4s - IGBT

Key Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognized, file no. E63532 Typical.

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SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.