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SEMiX223GD12Vc - IGBT

Key Features

  • Homogeneous Si.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX223GD12Vc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 323 246 225 675 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 263 197 225 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 675 1161 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c VGES tpsc Tj IF IFnom Inverse diode SEMiX223GD12Vc Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.