Datasheet4U Logo Datasheet4U.com

SEMiX291D16s - Bridge Rectifier Module

Key Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate.
  • UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.04 5 5 5.
  • 9,81 350 K/W K/W Nm Nm m/s² g Tj = 25 °C, IF = 231 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM sin. 180 per diode 2.09 0.83 4.6 1.1 0.45 V V mΩ mA K/W K/W Conditions min. typ. max. Unit Typ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SEMiX202GB17E4s IGBT Semikron
SEMiX205GARL07E3 IGBT Semikron
SEMiX205GD12E4 IGBT Semikron
SEMiX205MLI07E4 IGBT Semikron
SEMiX205MLI12E4V2 IGBT Semikron

Other Datasheets by Semikron Danfoss

Part Number Description
SEMIX201GD066HDS Trench IGBT
SEMIX201GD128DS SPT IGBT
SEMIX202GB066HD Trench IGBT
SEMiX202GB066HDs Trench IGBT
SEMIX202GB128D SPT IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMiX291D16s Absolute Maximum Ratings Symbol ID IFSM i2t Conditions Tj = 150 °C sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 232 196 1600 1380 12800 9522 1700 1600 -40 ... 150 -40 ... 125 Unit A A A A A²s A²s V V °C °C V V Recitifier Diode SEMiX® 13 VRSM VRRM Tj Module Tstg Visol AC sinus 50Hz 1 min 1s Bridge Rectifier Module (uncontrolled) SEMiX291D16s Features • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.