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SEMiX501D17Fs - Bridge Rectifier Module

Key Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate.
  • UL recognised file no. E63532 4000 4800 Characteristics Symbol VF V(TO) rT IRD Rth(j-c) Module RCC'+EE' Rth(c-s) Ms Mt a w Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Ω K res. , terminal-chip per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.04 5 5 5.
  • 9,81 350 TC = 25 °C TC = 125 °C 0.7 1 mΩ mΩ K/W K/W Nm Nm m/s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX501D17Fs Absolute Maximum Ratings Symbol ID IFSM i2t Conditions Tj = 150 °C sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Values 494 417 2740 2140 37538 22898 1700 1700 -40 ... 150 -40 ... 125 Unit A A A A A²s A²s V V °C °C V V Rect. Diode SEMiX® 13 VRSM VRRM Tj Module Tstg Visol AC sinus 50Hz 1 min 1s Bridge Rectifier Module (uncontrolled) SEMiX501D17Fs Features • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 4000 4800 Characteristics Symbol VF V(TO) rT IRD Rth(j-c) Module RCC'+EE' Rth(c-s) Ms Mt a w Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Ω K res.