SKD116
Key Features
- Units % 9 F 89G % 89G J IGBT - Chopper CAL - Diode - Freewheeling % E 9 0 >: 3002 K + 01 21 "96 #"")
- 9 "" $)# % 9 F 89G 5 L J "$$$ "#;$ .)-,)BF N Temperature Sensor Mechanical data D 1 05-09-2007 DIL © by SEMIKRON SKD 116/..L100
- 1 Power dissipation per module vs
- output current Fig
- 2 Surge overload current vs
- 3 Forward characteristic of single rectifier diode Fig
- 4 Temperature sensor characteristic Fig
- gate charge characteristic Fig
- 7 Output IGBT characteristics Ic=f(Vce), Tj=125°C Fig
- 8 Turn-on/-off energy=f(Ic) Fig
