SKM195GAL123D - IGBT Modules

Datasheet Summary

Features

MOS input (voltage controlled).
N channel, Homogeneous Si.
Very low tail current with low temperature dependence.
High short circuit capability, self limiting to 6.
Icnom.
Latch-up free.
Fast & soft inverse CAL diodes8).
Isolated copper baseplate using DCB Direct Copper Bonding Technology.
Large clearance (13 mm) and creepage distances (20 mm). Typical.

Semikron International

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Datasheet Details

Part number	SKM195GAL123D
Manufacturer	Semikron International
File Size	76.67 KB
Description	IGBT Modules
Datasheet	SKM195GAL123D Datasheet
Additional preview pages of the SKM195GAL123D datasheet.

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Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms; Tj = 150 °C Values ... 123 D 1200 1200 200 / 150 400 / 300 ± 20 1250 – 40 . . .

Published: Jul 11, 2016 |