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SKR12 - DIODE

Key Features

  • high current density due to mesa technology.
  • high surge current.
  • compatible to thick wire bonding.
  • compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Typical.

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Full PDF Text Transcription for SKR12 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SKR12. For precise diagrams, and layout, please refer to the original PDF.

SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) i2t IFSM Tjmax Conditions Tj = 25 °C, R I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 m...

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I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 190 26500 3200 2300 150 Unit V A A2s A A °C DIODE IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 °C, V RRM Tj = 120 °C, VRRM Tj = 25 °C, F I = 160 A Tj = 125 °C, IF = 160 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.2 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 1.