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SC1405 Datasheet Preview

SC1405 Datasheet

HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

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SC1405
High Speed Synchronous Power
MOS.ET Smart Driver
POWER MANAGEMENT
Description
.eatures
The SC1405 is a Dual-MOS.ET Driver with an internal
Overlap Protection Circuit to prevent shoot-through. Each
driver is capable of driving a 3000p. load in 15ns rise/
fall time and has ULTRA-LOW propagation delay from in-
put transition to the gate of the power .ET’s. Adaptive
Overlap Protection circuit ensures that the synchronous
.ET does not turn on until the top .ET source has reached
a voltage low enough to prevent shoot-through. The de-
lay between the bottom gate going low to the top gate
transitioning high is externally programmable via a ca-
pacitor to minimize dead time. The bottom .ET may be
disabled at light loads by keeping S_MOD low to trigger
asynchronous operation, thus saving the bottom .ET’s
gate drive current and inductor ripple current. An inter-
nal voltage reference allows threshold adjustment for
an Output Over-Voltage protection circuitry, independent
of the PWM controller.
Under-Voltage-Lock-Out circuit is included to guarantee
that both driver outputs are off when Vcc is less than or
equal to 4.4V (typ) at supply ramp up (4.35V at supply
ramp down). A CMOS output provides status indication
of the 5V supply. A low enable input places the IC in stand-
by mode, reducing supply current to less than 10µA.
SC1405 is offered in a high pitch (.025” lead spacing)
TSSOP package.
K .ast rise and fall times (15ns with 3000pf load)
K 14ns max. Propagation delay (BG going with low)
K Adaptive and programmable shoot-through
protection
K Wide input voltage range (4.5-25V)
K Programmable delay between MOS.ET’s
K Power saving asynchronous mode control
K Output overvoltage protection/overtemp shutdown
K Under-Voltage lock-out and power ready signal
K Less than 10µA stand-by current (EN=low)
K Power ready output signal
K Improved drive version of SC1405TS
K High frequency (to 1.2MHz) operation allows use of
small inductors and low cost caps in place of
electrolytics
Applications
K High Density/.ast transient microprocessor power
supplies
K Motor Drives/Class-D amps
K High efficiency portable computers
Typical Application Circuit
Revision 1, January 2001
1
www.semtech.com




Semtech Corporation

SC1405 Datasheet Preview

SC1405 Datasheet

HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

No Preview Available !

SC1405
POWER MANAGEMENT
Absolute Maximum Ratings
Parameter
VCC Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
OVP_S to PGND
Input Pin
Continuous Power Dissipation
Symbol
VMAXSV
VMAXBST-PGND
VMAXBST-DRN
VMAXDRN-PGN
VMAXOVP S-
PGND
CO
Pd
Thermal Impedance Junction to Case
θJC
Thermal Impedance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 Sec.
θJA
TJ
TSTG
TLEAD
NOTE:
(1) Specification refers to application circuit in Figure 1.
Conditions
Maximum
7
30
7
25
10
Tamb = 25oC, TJ = 125oC
Tcase = 25oC, TJ = 125oC
-0.3 to 7.3
0.66
2.56
40
150
0 to +125
-65 to +150
300
Units
V
V
V
V
V
V
W
°C/W
°C/W
°C
°C
°C
Electrical Characteristics - DC Operating Specifications
Unless specified: -0 < θJ < 125°C; VCC = 5V; 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
Power Supply
Supply Voltage
Quiescent Current
VCC
Iq_stby
EN = 0V
4.15
Typ
5
Max Units
6.0 V
10 µA
Quiescent Current, operating Iq_op
VCC = 5V, CO = 0V
1
mA
PRDY
High Level Output Voltage
Low Level Output Voltage
VOH VCC = 4.6V, lload = 10mA 4.5
VOL
VCC < UVLO threshold,
lload = 10µA
4.55
0.1
0.2
V
V
2001 Semtech Corp.
2
www.semtech.com


Part Number SC1405
Description HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER
Maker Semtech Corporation
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SC1405 Datasheet PDF






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