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SMC2562ESG6 Datasheet - Semtron

SMC2562ESG6 20V Complementary MOSFET

The SMC2562ESG6 is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high efficiency fast switching applications, this devices are well suited for applications in the small surface mount package. *PART NUMBER INFORMATION SMC 2562 E SG6.

SMC2562ESG6 Features

* N-Channel VDS=20V, ID=0.98A RDS(ON)=195mΩ(Typ.)@VGS=10V RDS(ON)=230mΩ(Typ.)@VGS=4.5V P-Channel VDS=-20V, ID=-0.65A RDS(ON)=440mΩ(Typ.)@VGS=-10V RDS(ON)=600mΩ(Typ.)@VGS=-4.5V

* High-speed switching, Low On-resistance

* 1.5V Low gate drive

* ESD protected

* APPLICATIONS

* Hend-Held Inst

SMC2562ESG6-Semtron.pdf