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STN2306 - N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number STN2306
Manufacturer Semtron
File Size 149.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN2306-Semtron.pdf

STN2306 Product details

Description

FEATURE The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.advanced trench technology to provide excellent RDS(ON).This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.‹ 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V ‹ 30V/2.8A, RDS(ON)= 55mΩ(typ.)@

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