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HFP740 - N-Channel Enhancement Mode Field Effect Transistor

General Description

This Power MOSFET is produced using advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • s.
  • 10A, 400V, RDS(on).

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Datasheet Details

Part number HFP740
Manufacturer Shantou Huashan Electronic
File Size 497.67 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFP740 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transistor █ General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S █ Features • 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF740 █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg —— Storage Temperature ------------------------------------------------------ 55~150 ℃ DataSheet4U.