HFP740 Datasheet | Shantou Huashan Electronic

.. Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor - General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S - Features - 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V - Fast switching - 100% avalanche tested - Improved dv/dt capability - Equivalent Type:IRF740 - Maximum Ratings（Ta=25℃ unless otherwise specified） T...