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PR3BMF51NSLF - Non-Zero Cross type DIP 8pin SSD

General Description

PR3BMF51NSLF Solid State Device (SSD) is an integration of an infrared emitting diode (IRED), a Phototriac Detector and a main output Triac.

Key Features

  • 0 sleeves.
  • Maximum (51.lOinuetpsu×t c4ursretanitr, sIT)(rms)≤1.2A 2. Non-zero crossing functionary 3. 8 pin DIP package (SMT gullwing also available) 4. High repetitive peak off-state voltage (VDRM : 600V) 5. Superior noise immunity (dV/dt : MIN. 100V/μs) 6. Response time, ton : MAX. 100μs 7. High isolation voltage between input and output (Viso(rms) : 4kV) 8. RoHS directive compliant.
  • Agency approvals/Compliance 1. Approved by UL508 file No. E94758 (as model No. R3BMF5) 2. Approved by CS.

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Other Datasheets by Sharp Corporation

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Full PDF Text Transcription (Reference)

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PR3BMF51NSLF Series PR3BMF51NSLF Series IT(rms)≦1.2A, Non-Zero Cross type DIP 8pin Triac output SSD ■Description PR3BMF51NSLF Solid State Device (SSD) is an integration of an infrared emitting diode (IRED), a Phototriac Detector and a main output Triac. This device is ideally suited for controlling high voltage AC loads with solid state reliability while providing 4kV isolation (Viso(rms)) from input to output. ■Features 20 sleeves *Maximum (51.lOinuetpsu×t c4ursretanitr, sIT)(rms)≤1.2A 2. Non-zero crossing functionary 3. 8 pin DIP package (SMT gullwing also available) 4. High repetitive peak off-state voltage (VDRM : 600V) 5. Superior noise immunity (dV/dt : MIN. 100V/μs) 6. Response time, ton : MAX. 100μs 7. High isolation voltage between input and output (Viso(rms) : 4kV) 8.