LH28F160S5H-L programming) equivalent, 16 m-bit (2 mb x 8/1 mb x 16) smart 5 flash memories (fast programming).
– Absolute protection with VPP = GND
– Flexible block locking
– Erase/write lockout during power transitions
* SRAM-co.
having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-bl.
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