LH28F320S3TD-L10 datasheet, memory equivalent, Sharp Electrionic Components

LH28F320S3TD-L10 memory equivalent, 32 m-bit (2 mb x 8/1 mb x 16 x 2-bank) smart 3 dual work flash memory.

Features and benefits

  – Absolute protection with VPP = GND
  – Flexible block locking
  – Erase/write lockout during power transitions
* SRAM-co.

Application

having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-bloc.

Description

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page .

Image gallery