HVX-2 Series Power MOSFET
2SK2663 ( F1E90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Tranｓconductance
gfs ID = 0.5A, VDS = 10V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 0.2mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 0.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 1A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 25V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 0.5A, VDD = 150V, RL = 300Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
900 V
250 μA
±0.1
0.6 1.0
S
10.5 14 Ω
2.5 3.0 3.5 V
1.5
12.5 ℃/Ｗ
10.5 nC
230
5 pF
23
10 18 ns
50 85
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