Title | |
Description | Absolute maximum ratings (Tc = 25℃ unless otherwise specified ) MOSFET Item Symbol Conditions Channel temperature Drain-source voltage Gate-source voltage Continuous drain current (DC) Continuous drain current (Peak) Total power dissipation Single avalanche current Single avalanche energy Tch VDSS VGSS ID IDP Pulse width 10μs, Duty = 1/10 PT IAS Starting Tch=25℃ Tch≦150℃ EAS Starting ... |
Features |
S=40V, VGS=0V
-
-
1.0
μA
Gate-source leakage current
IGSS
VGS=±20V, VDS=0V
-
-
±0.1
μA
Static drain-source on-state resistance
R DS(ON )
Chip
ID=60A, VGS=10V
Terminal ID=60A, VGS=10V
-
1.89
-
mΩ
-
2.4
3.1
mΩ
Gate threshold voltage Source-drain diode forward voltage Total gate charge Gate to source charge Gate to drain charg...
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Datasheet |
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