| Title | |
| Description | Absolute maximum ratings （Tc = 25℃ unless otherwise specified ） MOSFET Item Symbol Conditions Channel temperature Drain-source voltage Gate-source voltage Continuous drain current (DC) Continuous drain current (Peak) Total power dissipation Single avalanche current Single avalanche energy Tch VDSS VGSS ID IDP Pulse width 10μs, Duty = 1/10 PT IAS Starting Tch=25℃ Tch≦150℃ EAS Starting ... |
| Features |
S=40V, VGS=0V
－
－
1.0
μA
Gate-source leakage current
IGSS
VGS=±20V, VDS=0V
－
－
±0.1
μA
Static drain-source on-state resistance
R DS(ON )
Chip
ID=60A, VGS=10V
Terminal ID=60A, VGS=10V
－
1.89
－
mΩ
－
2.4
3.1
mΩ
Gate threshold voltage Source-drain diode forward voltage Total gate charge Gate to source charge Gate to drain charg...
|
| Datasheet |
 MG031E120004A Datasheet - 3.06MB |
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| Price | |
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