Shindengen P54B4SN
Power MOSFETs
| Part No. | P54B4SN |
|---|---|
| Datasheet | P54B4SN Download |
| Manufacturer |  Shindengen |
| Description | Power MOSFETs |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Storage temperature Tstg Channel tempertature Tch Drain-source voltage Gate-source voltage Continuous drain current(DC) Continuous drain current(Peak) Total power dissipation Single avalanche current Single avalanche energy VDSS VGSS ID IDP PT IAS EAS Pulse width 10μs, duty=1/100 Starting Tch=25℃ Tch≦150℃ Starting Tch=25℃ Tch≦150℃ ※︓See the original Specifications Ratings Unit -55 to 150 ℃ 150 ℃ 40 V ±20 V 54 A 162 A 44 W 28 A 84 mJ Shindengen Electric Manufacturing Co., Ltd. 1/7 P54B4SN_Rev.04(2022.06)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Drain-Source breakdown voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Static drain-source on-state resistance Gate threshold voltage Source-drain diode forward voltage Thermal resistance Total gate charge Gate to source charge Gate to drain charge Input capacitance Rever...
