900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SiTime

SiT3809 Datasheet Preview

SiT3809 Datasheet

80 MHz to 220 MHz MEMS VCXO

No Preview Available !

SiT3809
80 MHz to 220 MHz MEMS VCXO
Features
Any frequency between 80.000001 MHz and 220 MHz with 6 decimal
places of accuracy
100% pin-to-pin drop-in replacement to quartz-based VCXO
Frequency stability as tight as ±10 ppm
Widest pull range options from ±25 ppm to ±1600 ppm
Industrial or extended commercial temperature range
Superior pull range linearity of 1%, 10 times better than quartz
LVCMOS/LVTTL compatible output
Four industry-standard packages: 2.5 mm x 2.0 mm (4-pin),
3.2 mm x 2.5mm (4-pin), 5.0 mm x 3.2 mm (6-pin), 7.0 mm x 5.0 mm
(6-pin)
Instant samples with Time Machine II and field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Applications
Telecom clock synchronization, instrumentation
Low bandwidth analog PLL, jitter cleaner, clock recovery, audio
Video, 3G/HD-SDI, FPGA, broadband and networking
Electrical Specifications
Table 1. Electrical Characteristics[1, 2, 3]
Parameter
Output Frequency Range
Frequency Stability
Aging
Operating Temperature Range
Supply Voltage
Current Consumption
Standby Current
Pull Range[5, 6]
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Capacitance
Linearity
Frequency Change Polarity
Control Voltage Bandwidth (-3dB)
Symbol
f
F_stab
F_aging
T_use
Vdd
Idd
I_std
PR
VC_U
VC_L
Z_in
C_in
Lin
V_BW
Min.
Typ.
Max.
Unit
Condition
Frequency Range
80.000001
220 MHz
Frequency Stability and Aging
-10 – +10 ppm Inclusive of Initial tolerance[4] at 25°C, and variation over
-25 – +25 ppm temperature, rated supply voltage and load.
-50 – +50 ppm
-5 – +5 ppm 10 years, 25°C
-20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
1.71
1.8
1.89
V Additional supply voltages between 2.5V and 3.3V can be
2.25
2.5
2.75
V supported. Contact SiTime for additional information.
2.52
2.8
3.08
V
2.97
3.3
3.63
V
– 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V
– – 70 A Vdd = 2.5V, 2.8V, 3.3V, ST = GND, output is Weakly Pulled Down
– – 10 A Vdd = 1.8V, ST = GND, output is Weakly Pulled Down
VCXO Characteristics
±25, ±50, ±100, ±150, ±200,
±400, ±800, ±1600
ppm See the Absolute Pull Range and APR table on page 8
1.7 –
– V Vdd = 1.8V, Voltage at which maximum deviation is guaranteed.
2.4 –
– V Vdd = 2.5V, Voltage at which maximum deviation is guaranteed.
2.7 –
– V Vdd = 2.8V, Voltage at which maximum deviation is guaranteed.
3.2 –
– V Vdd = 3.3V, Voltage at which maximum deviation is guaranteed.
– – 0.1 V Voltage at which minimum deviation is guaranteed.
100 –
– k
– 5 – pF
– 0.1 1 %
Positive slope
– 8 – kHz Contact SiTime for 16 kHz and other high bandwidth options
SiTime Corporation
Rev. 1.0
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised March 18, 2014




SiTime

SiT3809 Datasheet Preview

SiT3809 Datasheet

80 MHz to 220 MHz MEMS VCXO

No Preview Available !

SiT3809
80 MHz to 220 MHz MEMS VCXO
Electrical Specifications (continued)
Table 1. Electrical Characteristics[1, 2, 3]
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Parameter
Duty Cycle
Rise/Fall Time
Output High Voltage
Output Low Voltage
Input Pull-up Impedance
Input Capacitance
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
Symbol
DC
Tr, Tf
VOH
VOL
Z_in
C_in
T_start
T_oe
T_resume
T_jitt
T_phj
Min.
45
40
90%
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
– 55 % f <= 165 MHz, all Vdds. Refer to Note 11 for definition of Duty Cycle.
– 60 % f > 165 MHz, all Vdds. Refer to Note 11 for definition of Duty Cycle.
1.5 2 ns
– – Vdd
10%
Vdd
Input Characteristics
100 250 k
5 – pF
Startup and Resume Timing
– 10 ms
– 115 ns
Vdd = 1.8V, 2.5V, 2.8V or 3.3V, 10% - 90% Vdd level
IOH = -7 mA (Vdd = 3.0V or 3.3V)
IOH = -4 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 7 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
For the OE/ST pin for 6-pin devices
For the OE/ST pin for 6-pin devices
See Figure 7 for startup resume timing diagram
f = 80.000001 MHz, all Vdds. For other freq, T_oe = 100 ns + 3
clock periods
7 10
Jitter
1.5 2
23
0.5 1
ms See Figure 8 for resume timing diagram
ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
ps f = 156.25 MHz, Vdd = 1.8V
ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
25°C temperature.
3. All max and min specifications are guaranteed across rated voltage variations and operating temperature ranges, unless specified otherwise
4. Initial tolerance is measured at Vin = Vdd/2
5. Absolute Pull Range (APR) is defined as the guaranteed pull range over temperature and voltage.
6. APR = pull range (PR) - frequency stability (F_stab) - Aging (F_aging)
Rev. 1.0
Page 2 of 9
www.sitime.com


Part Number SiT3809
Description 80 MHz to 220 MHz MEMS VCXO
Maker SiTime
Total Page 14 Pages
PDF Download

SiT3809 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SiT3807 Standard Frequency MEMS VCXO
SiTime
2 SiT3808 1 MHz to 80 MHz High Performance MEMS VCXO
SiTime
3 SiT3809 80 MHz to 220 MHz MEMS VCXO
SiTime





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy