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SiT8208 Datasheet Preview

SiT8208 Datasheet

Ultra Performance Oscillator

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SiT8208
Ultra Performance Oscillator
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Features
Any frequency between 1 and 80 MHz accurate to 6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
Applications
SATA, SAS, Ethernet, PCI Express, video, WiFi
Computing, storage, networking, telecom, industrial control
Electrical Characteristics[1]
Parameter
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
First year Aging
10-year Aging
F_aging
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
OE Disable Current
Standby Current
Idd
I_OD
I_std
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
DC
Tr, Tf
VOH
VOL
VIH
VIL
Z_in
Min.
Typ.
Max.
Unit
Condition
Frequency Range
1 – 80 MHz
Frequency Stability and Aging
-10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over
-20 – +20 PPM operating temperature, rated power supply voltage and load
-25 – +25 PPM
-50 – +50 PPM
-1.5
+1.5
PPM 25°C
-5 – +5 PPM 25°C
Operating Temperature Range
-20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
1.71 1.8 1.89
2.25 2.5 2.75
V Supply voltages between 2.5V and 3.3V can be supported.
V Contact SiTime for additional information.
2.52 2.8 3.08
V
2.97 3.3 3.63
V
– 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V
– – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
– – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
– – 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
– – 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
LVCMOS Output Characteristics
45 – 55 %
– 1.2 2 ns 15 pF load, 10% - 90% Vdd
90%
– Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
10%
Vdd IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Input Characteristics
70%
– Vdd Pin 1, OE or ST
30%
Vdd Pin 1, OE or ST
100 250
kPin 1, OE logic high or logic low, or ST logic high
2 – – MPin 1, ST logic low
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
SiTime Corporation
Rev. 1.02
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised June 24, 2013




SiTime

SiT8208 Datasheet Preview

SiT8208 Datasheet

Ultra Performance Oscillator

No Preview Available !

SiT8208
Ultra Performance Oscillator
Electrical Characteristics[1] (Continued)
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Parameter
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
Symbol
Min.
T_start
T_oe
T_resume
T_jitt
T_phj
Typ.
Max.
Unit
Startup and Resume Timing
7 10 ms
– 150 ns
6 10 ms
Jitter
1.5 2 ps
2 3 ps
0.5 1 ps
Condition
Measured from the time Vdd reaches its rated minimum value
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
In standby mode, measured from the time ST pin crosses 50%
threshold. Refer to Figure 5.
f = 75 MHz, Vdd = 1.8V
f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Configuration
Pin Symbol
Functionality
Output H or Open[2]: specified frequency output
Enable L: output is high impedance. Only output driver is disabled.
1 OE/ ST
H or Open[2]: specified frequency output
Standby L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2
GND
Power Electrical ground[3]
3
OUT
Output Oscillator output
4
VDD
Power Power supply voltage[3]
Notes:
2. A pull-up resistor of <10 kbetween OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Top View
OE/ST 1
4 VDD
GND 2
3 OUT
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
Min.
-65
-0.5
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Thermal Consideration
Package
7050
5032
3225
2520
JA, 4 Layer Board
(°C/W)
191
97
109
117
Environmental Compliance
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Parameter
JA, 2 Layer Board
(°C/W)
263
199
212
222
JC, Bottom
(°C/W)
30
24
27
26
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev. 1.02
Page 2 of 10
www.sitime.com


Part Number SiT8208
Description Ultra Performance Oscillator
Maker SiTime
Total Page 15 Pages
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