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SiT8919 Datasheet Preview

SiT8919 Datasheet

High Temperature Oscillator

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SiT8919
High Frequency, High Temperature Oscillator
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Features
Applications
Frequencies between 115.194001 MHz to 137 MHz accurate to 6
decimal places
Industrial, medical, non AEC-Q100 automotive, avionics and
other high temperature applications
Operating temperature from -40°C to 125°C. For -55°C option, refer
to SiT8920 and SiT8921
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Supply voltage of 1.8V or 2.5V to 3.3V
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 4.8 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Electrical Specifications
Table 1. Electrical Characteristics[1,2]
Parameters
Output Frequency Range
Frequency Stability
Operating Temperature Range
(ambient)
Supply Voltage
Current Consumption
OE Disable Current
Standby Current
Duty Cycle
Rise/Fall Time
Output High Voltage
Output Low Voltage
Symbol
f
F_stab
T_use
Vdd
Idd
I_od
I_std
DC
Tr, Tf
VOH
VOL
Min.
Typ.
Max.
Unit
Condition
Frequency Range
115.194001
137 MHz Refer to Table 13 for the exact list of supported frequencies
list of supported frequencies
Frequency Stability and Aging
-20 – +20 ppm Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
-25
+25
ppm
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
-30 – +30 ppm
-50 – +50 ppm
Operating Temperature Range
-40
+105
°C Extended Industrial
-40
+125
°C Automotive
Supply Voltage and Current Consumption
1.62
1.8 1.98
V
2.25
2.5 2.75
V
2.52
2.8 3.08
V
2.7 3.0 3.3 V
2.97
3.3 3.63
V
2.25
3.63
V
– 6.2 8 mA No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V or 3.3V
– 5.4 7 mA No load condition, f = 125 MHz, Vdd = 2.5V
– 4.8 6 mA No load condition, f = 125 MHz, Vdd = 1.8V
– – 4.5 mA Vdd = 2.5V to 3.3V, OE = Low, output in high Z state.
– – 4.0 mA Vdd = 1.8V, OE = Low, output in high Z state.
– 2.6 8.5 A Vdd = 2.8V to 3.3V, ST = Low, Output is Weakly Pulled Down
– 1.4 5.5 A Vdd = 2.5V, ST = Low, Output is Weakly Pulled Down
– 0.6 3.5 A Vdd = 1.8V, ST = Low, Output is Weakly Pulled Down
LVCMOS Output Characteristics
45 – 55 % All Vdds
– 1.0 2.0 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
– 1.3 2.5 ns Vdd =1.8V, 20% - 80%
– 1.0 3 ns Vdd = 2.25V - 3.63V, 20% - 80%
90%
– Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
10%
Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
SiTime Corporation
Rev. 1.0
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised December 17, 2013




SiTime

SiT8919 Datasheet Preview

SiT8919 Datasheet

High Temperature Oscillator

No Preview Available !

SiT8919
High Frequency, High Temperature Oscillator
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Table 1. Electrical Characteristics[1,2] (continued)
Parameters
Input High Voltage
Input Low Voltage
Input Pull-up Impedence
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
Symbol
Min.
VIH
VIL
Z_in
70%
50
2
T_start
T_oe
T_resume
T_jitt
T_pk
T_phj
Typ.
Max.
Unit
Input Characteristics
– – Vdd
30%
Vdd
87 150 k
– – M
Startup and Resume Timing
– 5 ms
– 130 ns
– 5 ms
Jitter
1.6 2.5
ps
1.8 3 ps
12 20 ps
14 30 ps
0.5 0.8 ps
1.3 2 ps
Condition
Pin 1, OE or ST
Pin 1, OE or ST
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
Measured from the time Vdd reaches 90% of final value
f = 115.194001 MHz. For other frequencies, T_oe = 100 ns + 3 *
clock periods
Measured from the time ST pin crosses 50% threshold
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
f = 125 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 125 MHz, Integration bandwidth = 12 kHz to 20 MHz
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristic table is specified for the nominal value of the highest voltage option for that parameter and at
25 °C temperature.
Table 2. Pin Description
Pin Symbol
Functionality
Output
Enable
H[3]: specified frequency output
L: output is high impedance. Only output driver is disabled.
H[3]: specified frequency output
1 OE/ ST/NC Standby L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
No Connect
Any voltage between 0 and Vdd or Open[3]: Specified frequency
output. Pin 1 has no function.
2
GND
Power
Electrical ground[4]
3
OUT
Output Oscillator output
4
VDD
Power
Power supply voltage[4]
Notes:
3. In OE or ST mode, a pull-up resistor of 10kohm or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Top View
OE/ST/NC 1
4 VDD
GND 2
3 OUT
Figure 1. Pin Assignments
Rev. 1.0
Page 2 of 13
www.sitime.com


Part Number SiT8919
Description High Temperature Oscillator
Maker SiTime
Total Page 18 Pages
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