HYB514405BJ ram equivalent, 1m x 4-bit dynamic ram.
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138 77 32 47 13
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162 89 36 54.
40
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40
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ns
Test Mode
Write command setup time Write command hold time
tWTS tWTH.
EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 70 ns) Low Power EDO-DRAM (access time 50 ns) Low Power EDO-DRAM (access time 60 ns) Low Power EDO-DRAM (access time 70 ns)
Semiconductor Group
2
HYB 514405BJ/BJL-50/.
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