HYB514800BJ Datasheet - Siemens

HYB514800BJ 512kx8-Bit Dynamic RAM

DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 80 ns) Semiconductor Group 125 01.95 HYB 514800BJ -60/-70/-80 512k x 8 DRAM The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The HYB 514800BJ utilizes CMOS silicon gate process as well as.

512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information 512 288 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 60 ns (-60 version) 70 ns (-70 version) 80 ns (-80 version) CAS access time: 20 ns Cycle time: 110 ns (-60 version) 130 ns (-70 version) 150 ns (-80 version) Fast page mode cycle time 45 ns (-60 version) 45 ns (-70 version) 50 ns (-80 version) Single + 5 V (± 10 %) supply with a built.

HYB514800BJ Features

* , ICC4 and ICC6 depend on cycle rate. ICC1 , ICC4 depend on output loading. 4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh cou

HYB514800BJ Datasheet (211.28 KB)