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HYM328025GS-60 - 8M x 32-Bit EDO-DRAM Module

General Description

VSS DQ16 DQ17 DQ18 DQ19 N.C.

Key Features

  • (max. ) are reference levels for measuring timing of.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM328025GS-50 8M x 32-Bit EDO-DRAM Module
HYM328025S 8M x 32-Bit EDO-DRAM Module
HYM328020GD- 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
HYM328020S 8M x 32-Bit Dynamic RAM Module
HYM328000GD- 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8M × 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 • SIMM modules with 8 388 608 words by 32-bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 5280 mW active (-50 version) max. 4840 mW active (-60 version) CMOS – 88 mW standby TTL –176 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 16 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-15) with 25.