HYM64V2005GU-60 module equivalent, 3.3v 2m x 64-bit edo-dram module 3.3v 2m x 72-bit edo-dram module.
bsp;– ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms 7
Read Cycle
Access time from RAS Access time from CAS Access time from column address OE access time Column address t.
1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Extended Data Out (EDO) Per.
2M x 64 DRAM module (access time 50 ns) 2M x 64 DRAM module (access time 60 ns) 2M x 72 DRAM module (access time 50 ns) 2M x 72 DRAM module (access time 60 ns)
Pin Names A0-A10 A0-A9 DQ0 - DQ63 CB0-CB7 RAS0, RAS2 CAS0 - CAS7 WE0, WE2 OE0, OE2 Vcc V.
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